Improvement of implanted layer properties of semi-insulating GaAs by ingot annealing
I. Priecel, L. Duríček, V. Daniška, D. KorytárVolume:
126
Year:
1993
Language:
english
Pages:
6
DOI:
10.1016/0022-0248(93)90231-k
File:
PDF, 602 KB
english, 1993