RHEED studies of initial stage of Ge film growth on (311)Si...

Journal of Crystal Growth 1993 / 03 Vol. 128; Iss. 1-4

RHEED studies of initial stage of Ge film growth on (311)Si by gas source molecular beam epitaxy

Yasuda, Y., Itoh, K., Ohshima, N., Koide, Y., Zaima, S.
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Volume:
128
Language:
english
Pages:
8
Journal:
Journal of Crystal Growth
DOI:
10.1016/0022-0248(93)90341-s
Date:
March, 1993
File:
PDF, 477 KB
english, 1993
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