Role of growth temperature in GSMBE growth of strained-layer InGaAs/GaAs quantum well lasers
G. Zhang, A. Ovtchinnikov, M. PessaVolume:
127
Year:
1993
Language:
english
Pages:
4
DOI:
10.1016/0022-0248(93)90606-w
File:
PDF, 348 KB
english, 1993