Characteristics of in-situ deposited...

Journal of Crystal Growth 1993 Vol. 127; Iss. 1-4

Characteristics of in-situ deposited Si3N4⧸Si⧸In0.53Ga0.47As metal-insulator-semiconductor structures

D.S.L. Mui, A.L. Demirel, S. Strite, Z. Wang, J. Reed, D. Biswas, H. Morkoç
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Volume:
127
Year:
1993
Language:
english
Pages:
4
DOI:
10.1016/0022-0248(93)90736-g
File:
PDF, 323 KB
english, 1993
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