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A study on in-situ maskless selective epitaxy of GaAs by a low-energy Ga focused ion beam with an As4 molecular beam
Isao Saitoh, Kangsa Pak, Yuichiroh Inoue, Naoki Ohshima, Hiroo YonezuVolume:
146
Year:
1995
Language:
english
Pages:
4
DOI:
10.1016/0022-0248(94)00494-3
File:
PDF, 256 KB
english, 1995