![](/img/cover-not-exists.png)
Investigations on deep traps in GaAs and (AlxGa1−x)As bulk layers grown by metalorganic vapour-phase epitaxy using the new alternative arsenic precursor diethyl-tert-butylarsin
Z. Spika, G. Zimmermann, W. Stolz, E.O. Göbel, P. Gimmnich, J. Lorberth, A. Greiling, A. Salzmann, S. Weiß, U. Sudjadi, A. Bock, R. KassingVolume:
146
Year:
1995
Language:
english
Pages:
6
DOI:
10.1016/0022-0248(94)00574-5
File:
PDF, 423 KB
english, 1995