The growth properties of SiGe films on Si(100) using Si2H6...

The growth properties of SiGe films on Si(100) using Si2H6 gas and Ge solid source molecular beam epitaxy

Hiroyuki Wado, Tadami Shimizu, Makoto Ishida, Tetsuro Nakamura
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Volume:
147
Year:
1995
Language:
english
Pages:
6
DOI:
10.1016/0022-0248(94)00859-0
File:
PDF, 433 KB
english, 1995
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