Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the group V source
J.M. Redwing, T.F. Kuech, D. Saulys, D.F. GainesVolume:
135
Year:
1994
Language:
english
Pages:
11
DOI:
10.1016/0022-0248(94)90130-9
File:
PDF, 1.08 MB
english, 1994