Beryllium-doped InGaAs grown by low-pressure metalorganic chemical vapor deposition
Takashi Kobayashi, Kenji Kurishima, Tadao IshibashiVolume:
142
Year:
1994
Language:
english
Pages:
4
DOI:
10.1016/0022-0248(94)90262-3
File:
PDF, 280 KB
english, 1994