Beryllium-doped InGaAs grown by low-pressure metalorganic...

Beryllium-doped InGaAs grown by low-pressure metalorganic chemical vapor deposition

Takashi Kobayashi, Kenji Kurishima, Tadao Ishibashi
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Volume:
142
Year:
1994
Language:
english
Pages:
4
DOI:
10.1016/0022-0248(94)90262-3
File:
PDF, 280 KB
english, 1994
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