The use of hex-5-enylarsine as a chemically designed precursor to probe the mechanisms of the metalorganic vapour phase epitaxy growth of gallium arsenide; consequences for reactor design
R.D. Hoare, M.E. Pemble, I.M. Povey, J.O. Williams, D.F. Foster, C. Glidewell, D.J. Cole-HamiltonVolume:
137
Year:
1994
Language:
english
Pages:
8
DOI:
10.1016/0022-0248(94)90971-7
File:
PDF, 681 KB
english, 1994