Transmission electron microscopy study on defect reduction in GaAs on Si heteroepitaxial layers grown by metalorganic vapor phase epitaxy
N.Y. Jin-Phillipp, F. Phillipp, T. Marschner, W. Stolz, E.O. GöbelVolume:
158
Year:
1996
Language:
english
Pages:
9
DOI:
10.1016/0022-0248(95)00338-x
File:
PDF, 1.29 MB
english, 1996