Electron mobility enhancement in a strained Si channel

Journal of Crystal Growth 1995 Vol. 157; Iss. 1-4

Electron mobility enhancement in a strained Si channel

L. Garchery, I. Sagnes, P. Warren, J.-C. Dupuy, P.A. Badoz
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
157
Year:
1995
Language:
english
Pages:
6
DOI:
10.1016/0022-0248(95)00356-8
File:
PDF, 406 KB
english, 1995
Conversion to is in progress
Conversion to is failed