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Lateral composition modulation in InGaAsP strained layers and quantum wells grown on (100) InP by gas source molecular beam epitaxy
R.R. LaPierre, T. Okada, B.J. Robinson, D.A. Thompson, G.C. WeatherlyVolume:
158
Year:
1996
Language:
english
Pages:
9
DOI:
10.1016/0022-0248(95)00364-9
File:
PDF, 851 KB
english, 1996