Influence of base dopant out-diffusion into the emitter in SiSiGe heterojunction bipolar transistor using Monte Carlo simulations
Sylvie Galdin, Philippe Dollfus, Mireille Mouis, Françoise Meyer, Patrice HestoVolume:
157
Year:
1995
Language:
english
Pages:
5
DOI:
10.1016/0022-0248(95)00409-2
File:
PDF, 316 KB
english, 1995