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Liquid phase epitaxy of highly strained InGaAsP/GaAs films in the 1.4–1.8 eV interval of band gaps
Yu.B. Bolkhovityanov, A.S. Jaroshevich, N.V. Nomerotsky, M.A. Revenko, E.M. TrukhanovVolume:
158
Year:
1996
Language:
english
Pages:
7
DOI:
10.1016/0022-0248(95)00445-9
File:
PDF, 498 KB
english, 1996