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The growth start on the heterovalent GaAsZnSe interface under Te, Se and Zn termination
W. Spahn, H.R. Ress, K. Schüll, M. Ehinger, D. Hommel, G. LandwehrVolume:
159
Year:
1996
Language:
english
Pages:
5
DOI:
10.1016/0022-0248(95)00871-3
File:
PDF, 346 KB
english, 1996