Selective epitaxial growth of Ge and SiGe using Si2H6 gas...

Selective epitaxial growth of Ge and SiGe using Si2H6 gas and Ge solid source molecular beam epitaxy

Hiroyuki Wado, Tadami Shimizu, Seiji Ogura, Makoto Ishida, Tetsuro Nakamura
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Volume:
150
Year:
1995
Language:
english
Pages:
5
DOI:
10.1016/0022-0248(95)80084-p
File:
PDF, 445 KB
english, 1995
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