Selective epitaxial growth of Ge and SiGe using Si2H6 gas and Ge solid source molecular beam epitaxy
Hiroyuki Wado, Tadami Shimizu, Seiji Ogura, Makoto Ishida, Tetsuro NakamuraVolume:
150
Year:
1995
Language:
english
Pages:
5
DOI:
10.1016/0022-0248(95)80084-p
File:
PDF, 445 KB
english, 1995