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Epitaxial growth of Si1-x-yGexCy by ultrahigh vacuum chemical vapor deposition using disilane, germane and acetylene
Masayuki Hiroi, Toru TatsumiVolume:
150
Year:
1995
Language:
english
Pages:
6
DOI:
10.1016/0022-0248(95)80091-p
File:
PDF, 549 KB
english, 1995