Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates
J.F. Nützel, C.M. Engelhardt, R. Wiesner, D. Többen, M. Holzmann, G. AbstreiterVolume:
150
Year:
1995
Language:
english
Pages:
4
DOI:
10.1016/0022-0248(95)80092-q
File:
PDF, 337 KB
english, 1995