Growth and properties of high-mobility two-dimensional hole...

Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates

J.F. Nützel, C.M. Engelhardt, R. Wiesner, D. Többen, M. Holzmann, G. Abstreiter
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Volume:
150
Year:
1995
Language:
english
Pages:
4
DOI:
10.1016/0022-0248(95)80092-q
File:
PDF, 337 KB
english, 1995
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