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InP-based heterostructure field-effect transistors with high-quality short-period (InAs)3m/(GaAs)1m superlattice channel layers
U. Auer, R. Reuter, C. Heedt, W. Prost, F.J. TegudeVolume:
150
Year:
1995
Language:
english
Pages:
5
DOI:
10.1016/0022-0248(95)80134-x
File:
PDF, 369 KB
english, 1995