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Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures
H. Künzel, J. Böttcher, A. Hase, S. Strähle, E. KohnVolume:
150
Year:
1995
Language:
english
Pages:
5
DOI:
10.1016/0022-0248(95)80137-2
File:
PDF, 406 KB
english, 1995