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Molecular beam epitaxy growth for a heavily-doped thin base layer of heterojunction bipolar transistors used for high-speed integrated circuits
N. Iizuka, K. Tsuda, T. Nozu, T. Sugiyama, Y. Kuriyama, M. ObaraVolume:
150
Year:
1995
Language:
english
Pages:
5
DOI:
10.1016/0022-0248(95)80148-6
File:
PDF, 378 KB
english, 1995