High sensitivity Hall elements made from Si-doped InAs on...

High sensitivity Hall elements made from Si-doped InAs on GaAs substrates by molecular beam epitaxy

Tatsuro Iwabuchi, Takashi Ito, Masaki Yamamoto, Kentaro Sako, Yuichi Kanayama, Kazuhiro Nagase, Takashi Yoshida, Fumiaki Ichimori, Ichiro Shibasaki
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Volume:
150
Year:
1995
Language:
english
Pages:
5
DOI:
10.1016/0022-0248(95)80149-7
File:
PDF, 378 KB
english, 1995
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