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Less than 10 defects/cm2 · μm in molecular beam epitaxy grown GaAs by arsenic cracking
Shigekazu Izumi, Norio Hayafuji, Takuji Sonoda, Saburo Takamiya, Shigeru MitsuiVolume:
150
Year:
1995
Language:
english
Pages:
6
DOI:
10.1016/0022-0248(95)80171-8
File:
PDF, 624 KB
english, 1995