Tin as an n-type dopant in the molecular beam epitaxial...

Journal of Crystal Growth 1995 Vol. 150; Iss. part-P1

Tin as an n-type dopant in the molecular beam epitaxial growth of GaAs(111)A

S.J. Hu, M.R. Fahy, K. Sato, B.A. Joyce
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Volume:
150
Year:
1995
Language:
english
Pages:
4
DOI:
10.1016/0022-0248(95)80211-t
File:
PDF, 344 KB
english, 1995
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