Model on transport phenomena and epitaxial growth of...

Journal of Crystal Growth 1996 Vol. 169; Iss. 1

Model on transport phenomena and epitaxial growth of silicon thin film in SiHCl3H2 system under atmospheric pressure

Hitoshi Habuka, Takatoshi Nagoya, Masanori Mayusumi, Masatake Katayama, Manabu Shimada, Kikuo Okuyama
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
169
Year:
1996
Language:
english
Pages:
12
DOI:
10.1016/0022-0248(96)00376-4
File:
PDF, 857 KB
english, 1996
Conversion to is in progress
Conversion to is failed