Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/...

IEEE Electron Device Letters 2005 / 04 Vol. 26; Iss. 4

Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation

Edwards, A.P., Mittereder, J.A., Binari, S.C., Katzer, D.S., Storm, D.F., Roussos, J.A.
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Volume:
26
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2005.844694
Date:
April, 2005
File:
PDF, 108 KB
english, 2005
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