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A facile route to Si nanowire gate-all-around field effect transistors with a steep subthreshold slope
Lee, Jae-Hyun, Kim, Byung-Sung, Choi, Soon-Hyung, Jang, Yamujin, Hwang, Sung Woo, Whang, DongmokVolume:
5
Year:
2013
Language:
english
Journal:
Nanoscale
DOI:
10.1039/C3NR02552G
File:
PDF, 601 KB
english, 2013