[IEEE International Reliability Physics Symposium - Dallas, TX, USA (30 March-4 April 2003)] 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. - Degradation of tunnel oxide by FN current stress and its effects on data retention characteristics of 90 nm NAND flash memory cells
Jae-Duk Lee,, Jeong-Hyuk Choi,, Donggun Park,, Kinam Kim,Year:
2003
Language:
english
DOI:
10.1109/RELPHY.2003.1197798
File:
PDF, 305 KB
english, 2003