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A high performance and low DC power V-band MMIC LNA using 0.1 mu m InGaAs/InAlAs/InP HEMT technology
Lai, R., Chang, K.W., Wang, H., Tan, K., Lo, D.C., Streit, D.C., Liu, P.H., Dia, R., Berenz, J.Volume:
3
Language:
english
Journal:
IEEE Microwave and Guided Wave Letters
DOI:
10.1109/75.251393
Date:
December, 1993
File:
PDF, 280 KB
english, 1993