Growth on Differently Oriented Sidewalls of SiC Mesas As a...

Crystal Growth & Design 2012 / 05 Vol. 12; Iss. 5

Growth on Differently Oriented Sidewalls of SiC Mesas As a Way of Achieving Well-Aligned SiC Nanowires

K. G. Thirumalai, Rooban Venkatesh, Krishnan, Bharat, Davydov, Albert V., Merrett, J. Neil, Koshka, Yaroslav
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Volume:
12
Language:
english
Journal:
Crystal Growth & Design
DOI:
10.1021/cg201398z
Date:
May, 2012
File:
PDF, 2.40 MB
english, 2012
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