Increase in Read Noise Margin of Single-Bit-Line SRAM Using...

IEEE Transactions on Very Large Scale Integration (VLSI) Systems 2014 / 03 Vol. 22; Iss. 3

Increase in Read Noise Margin of Single-Bit-Line SRAM Using Adiabatic Change of Word Line Voltage

Nakata, Shunji, Hanazono, Hiroki, Makino, Hiroshi, Morimura, Hiroki, Miyama, Masayuki, Matsuda, Yoshio
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
22
Language:
english
Journal:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
DOI:
10.1109/TVLSI.2013.2247642
Date:
March, 2014
File:
PDF, 1.62 MB
english, 2014
Conversion to is in progress
Conversion to is failed