Structure and surface morphology of Si1 —xGexlayers grown...

Inorganic Materials 2013 / 08 Vol. 49; Iss. 8

Structure and surface morphology of Si1 —xGexlayers grown on Si/sapphire by molecular beam epitaxy using a sublimation silicon source and gaseous germanium source

S. A. Matveev, S. A. Denisov, V. Yu. Chalkov, V. G. Shengurov, D. E. Nikolichev, A. V. Boryakov, V. N. Trushin, E. A. Pitirimova
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Volume:
49
Language:
english
DOI:
10.1134/S0020168513070108
Date:
August, 2013
File:
PDF, 1.01 MB
english, 2013
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