Impact of Precisely Positioned Dopants on the Performance...

IEEE Transactions on Electron Devices 2013 / 03 Vol. 60; Iss. 3

Impact of Precisely Positioned Dopants on the Performance of an Ultimate Silicon Nanowire Transistor: A Full Three-Dimensional NEGF Simulation Study

Georgiev, Vihar P., Towie, Ewan A., Asenov, Asen
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2238944
Date:
March, 2013
File:
PDF, 1.19 MB
english, 2013
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