InP- and GaAs-Based Plasmonic High-Electron-Mobility Transistors for Room-Temperature Ultrahigh-Sensitive Terahertz Sensing and Imaging
Watanabe, Takayuki, Boubanga-Tombet, Stephane A., Tanimoto, Yudai, Fateev, Denis, Popov, Viacheslav, Coquillat, Dominique, Knap, Wojciech, Meziani, Yahya M., Wang, Yuye, Minamide, Hiroaki, Ito, HiromaVolume:
13
Language:
english
Journal:
IEEE Sensors Journal
DOI:
10.1109/JSEN.2012.2225831
Date:
January, 2013
File:
PDF, 1.57 MB
english, 2013
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