Critical spacing between emitter and base in InGaP...

IEEE Electron Device Letters 2002 / 10 Vol. 23; Iss. 10

Critical spacing between emitter and base in InGaP heterojunction bipolar transistors (HBTs)

Chung-Er Huang,, Chien-Ping Lee,, Hsien-Chang Liang,, Ron-Ting Huang
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Volume:
23
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2002.803758
Date:
October, 2002
File:
PDF, 191 KB
english, 2002
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