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[IEEE 2012 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu (2012.04.23-2012.04.25)] Proceedings of Technical Program of 2012 VLSI Technology, System and Application - AlGaN/GaN-on-Silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm2 using a CMOS-compatible gold-free process
Xinke Liu,, Chunlei Zhan,, Kwok Wai Chan,, Wei Liu,, Leng Seow Tan,, Kie Leong Teo,, Chen, K. J., Yee-Chia Yeo,Year:
2012
Language:
english
DOI:
10.1109/VLSI-TSA.2012.6210119
File:
PDF, 450 KB
english, 2012