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Effects of traps and polarization charges on device performance of AlGaN/GaN high electron mobility transistors
Hussein, A.SH., Ghazai, Alaa J., Salman, Emad A., Hassan, Z.Volume:
63
Language:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2013.08.009
Date:
November, 2013
File:
PDF, 306 KB
english, 2013