[IEEE 2006 International Workshop on Junction Technology - Shanghai, China ()] 2006 International Workshop on Junction Technology - Nickel SALICIDE Process Technology for CMOS Devices of 90nm Node and Beyond
Lu, J.P., Miles, D.S., DeLoach, J., Yue, D.F., Chen, P.J., Bonifield, T., Crank, S., Yu, S.F., Mehrad, F., Obeng, Y., Ramappa, D.A., Corum, D., Guldi, R.L., Robertson, L.S., Liu, X., Hall, L.H., Xu, YYear:
2006
Language:
english
DOI:
10.1109/IWJT.2006.220877
File:
PDF, 7.53 MB
english, 2006