Transport properties of a gated, double quantum well HEMT

Semiconductor Science and Technology 1991 / 07 Vol. 6; Iss. 7

Transport properties of a gated, double quantum well HEMT

Harris, J J, Velde, B J van der, Roberts, C, Woodbridge, K, Hutchings, K M
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Volume:
6
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/6/7/009
Date:
July, 1991
File:
PDF, 217 KB
english, 1991
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