Bandgap modification in GaInAs/InP quantum well structures...

Semiconductor Science and Technology 2001 / 11 Vol. 16; Iss. 11

Bandgap modification in GaInAs/InP quantum well structures using switched ion channelling lithography

Winzell, Thomas, Maximov, Ivan, Landin, Lars, Zhang, Yanwen, Gustafsson, Anders, Samuelson, Lars, Whitlow, Harry J
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Volume:
16
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/16/11/301
Date:
November, 2001
File:
PDF, 127 KB
english, 2001
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