A III–V nanowire channel on silicon for high-performance vertical transistors
Tomioka, Katsuhiro, Yoshimura, Masatoshi, Fukui, TakashiVolume:
488
Language:
english
Journal:
Nature
DOI:
10.1038/nature11293
Date:
August, 2012
File:
PDF, 1.05 MB
english, 2012