Point defects in gamma-irradiated n-GaN

Semiconductor Science and Technology 2000 / 01 Vol. 15; Iss. 1

Point defects in gamma-irradiated n-GaN

Emtsev, V V, Davydov, V Yu, Kozlovskii, V V, Lundin, V V, Poloskin, D S, Smirnov, A N, Shmidt, N M, Usikov, A S, Aderhold, J, Klausing, H, Mistele, D, Rotter, T, Stemmer, J, Semchinova, O, Graul, J
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Volume:
15
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/15/1/313
Date:
January, 2000
File:
PDF, 251 KB
english, 2000
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