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Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth
Ishida, Yuuki, Takahashi, Tetsuo, Kojima, Kazutoshi, Okumura, Hajime, Arai, Kazuo, Yoshida, SadafumiVolume:
457-460
Year:
2004
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.457-460.213
File:
PDF, 414 KB
english, 2004