![](/img/cover-not-exists.png)
[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - A new generation of high voltage MOSFETs breaks the limit line of silicon
Deboy, G., Marz, N., Stengl, J.-P., Strack, H., Tihanyi, J., Weber, H.Year:
1998
Language:
english
DOI:
10.1109/IEDM.1998.746448
File:
PDF, 380 KB
english, 1998