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[IEEE 2012 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA, USA (2012.04.15-2012.04.19)] 2012 IEEE International Reliability Physics Symposium (IRPS) - Impact of hot electrons on the reliability of AlGaN/GaN High Electron Mobility Transistors
Meneghini, Matteo, Stocco, Antonio, Silvestri, Riccardo, Ronchi, Nicolo, Meneghesso, Gaudenzio, Zanoni, EnricoYear:
2012
Language:
english
DOI:
10.1109/IRPS.2012.6241779
File:
PDF, 462 KB
english, 2012