Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O3
Liao, Baochen, Stangl, Rolf, Ma, Fajun, Hameiri, Ziv, Mueller, Thomas, Chi, Dongzhi, Aberle, Armin G., Bhatia, Charanjit S., Hoex, BramVolume:
114
Year:
2013
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4819970
File:
PDF, 1.03 MB
english, 2013