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[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Demonstration of highly scaled FinFET SRAM cells with high-κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond
Kawasaki, H., Khater, M., Guillorn, M., Fuller, N., Chang, J., Kanakasabapathy, S., Chang, L., Muralidhar, R., Babich, K., Yang, Q., Ott, J., Klaus, D., Kratschmer, E., Sikorski, E., Miller, R., ViswaYear:
2008
Language:
english
DOI:
10.1109/IEDM.2008.4796661
File:
PDF, 1.12 MB
english, 2008