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[IEEE ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005. - San Francisco, CA, USA (Feb. 6-10, 2005)] ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005. - A 128 Mb NOR flash memory with 3 MB/s program time and low-power write performance by using in-package inductor charge-pump
Sundaram, R., Javanifard, J., Walimbe, P., Pathak, B.M., Melcher, R.L., Peining Wang,, Tacata, J.I.Year:
2005
Language:
english
DOI:
10.1109/ISSCC.2005.1493863
File:
PDF, 868 KB
english, 2005