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[IEEE 2006 International Conference on Simulation of Semiconductor Processes and Devices - Monterey, CA, USA (2006.09.6-2006.09.8)] 2006 International Conference on Simulation of Semiconductor Processes and Devices - Investigation of SNM with Random Dopant Fluctuations for FD SGSOI and FinFET 6T SOI SRAM Cell by Three-dimensional Device Simulation
Tanabe, R., Ashizawa, Y., Oka, H.Year:
2006
Language:
english
DOI:
10.1109/SISPAD.2006.282848
File:
PDF, 3.25 MB
english, 2006